IEC 60749-6-2017 半导体器件.机械和气候试验方法.第6部分:高温下储存

标准号：IEC 60749-6-2017
中文标准名称：半导体器件.机械和气候试验方法.第6部分:高温下储存
英文标准名称：Semiconductor devices - Mechanical and climatic test methods - Part 6: Storage at high temperature
标准类型：L40
发布日期：1999/12/31 12:00:00
实施日期：1999/12/31 12:00:00
中国标准分类号：L40
国际标准分类号：31.080.01
适用范围：The purpose of this part of IEC 60749 is to test and determine the effect on all solid state electronic devices of storage at elevated temperature without electrical stress applied. This test is typically used to determine the effects of time and temperature, under storage conditions, for thermally activated failure methods and time-to-failure of solid state electronic devices, including non-volatile memory devices (data-retention failure mechanisms). This test is considered non-destructive but should preferably be used for device qualification. If such devices are used for delivery, the effects of this highly accelerated stress test will need to be evaluated. Thermally activated failure mechanisms are modelled using the Arrhenius equation for acceleration, and guidance on the selection of test temperatures and durations can be found in IEC 60749-43.