指令豁免清单

豁免项

对应文件号   签署/颁布日期

1.     Mercury in compact fluorescent lamps not exceeding 5 mg per lamp.

小型日光灯中的汞含量不得超过5毫克/灯。

2002/95/EC
2003.01.27/
2003.02.13

2a. Mercury in straight fluorescent lamps for general purposes not exceeding halophosphate 10 mg.

一般用途的直管日光灯中的汞含量不得超过盐磷酸盐10毫克。
 

2b. Mercury in straight fluorescent lamps for general purposes not exceeding triphosphate with normal lifetime 5 mg.
一般用途的直管日光灯中的汞含量不得超过正常的三磷酸盐5毫克

2c. Mercury in straight fluorescent lamps for general purposes not exceeding triphosphate with long lifetime 8 mg.
一般用途的直管日光灯中的汞含量不得超过长效的三磷酸盐8毫克。

3. Mercury in straight f1uorescent lamps for special purposes
特殊用途的直管日光灯中的汞含量。

4. Mercury in other lamps not specifically mentioned in this Annex.
本附录中未特别提及的其它照明灯中的汞含量。

5. Lead in glass of cathode ray tubes, electronic components and
fluorescent tubes.
阴*射线管、电子元件和发光管的玻璃内的铅含量.

6a. Lead as an alloying element in steel containing up to 0.35% lead by weight.
铅作为钢的合金元素，其含量可达0.35%（重量计）。

6b. Lead as an alloying element in aluminium containing up to 0.4% lead by weight.
铅作为铝的合金元素，其含量可达0.4%（重量计）。

6c. Lead as an alloying element in copper containing up to 4% lead by weight.
铅作为铜的合金元素，其含量可达4%（重量计）。

7a. Lead in high melting temperature type solders (i.e.lead-based alloys containing 85 % by weight or more lead).
高温融化型焊料中的铅（如铅含量≥85%的铅基合金中的铅）。

2005/747/EC
2005.10.21/
2005.10.25

7b. Lead in solders for servers, storage and storage array systems, network infrastructure equipment for switching, signalling, transmission as well as network management for telecommunications
用于服务器、存储和存储列阵系统以及电信用交换、发信、传输和网络管理的网络基础设施设备的焊料中的铅。

7c.Lead in electronic ceramic parts (e.g. piezoelectronic devices).
电子陶瓷部件中的铅（例如高压电子装置）。

2005/747/EC
2005.10.21/
2005.10.25

8. Cadmium and its compounds in electrical contacts and cadmium plating except for applications banned under Directive 91/338/EEC amending Directive 76/769/EEC relating to restrictions on the marketing and use of certain dangerous substances and preparations.
除了76/769/EEC《关于限制某些有害物质和物品销售和使用》指令的修改文件91/338/EEC指令中禁止用途外，电触头和镉镀层上的镉及其化合物

9.Hexavalent chromium as an anti-corrosion of the carbon steel cooling system in absorption refrigerators.
吸收式电冰箱中作为碳钢冷却系统防腐层的六价铬。

2002/95/EC
2003.01.27/
2003.02.13

9a. DecaBDE in polymeric applications.
聚合物中使用的十溴二苯醚——据欧洲法院判决该条于2008.07.01删除，不被豁免。

2005/717/EC
2005.10.13/
2005.10.15

9b. Lead in lead-bronze bearing shells and bushes.
铅-铜轴承外壳与轴衬中的铅

10. Within the procedure referred to in Article 7(2),the Commission shall evaluate the applications for:
——Deca BDE,
——mercury in straight fluorescent lamps for special purposes,
——lead in solders for servers, storage and storage array systems, network infrastructure equipment for switching, signalling, transmission as well as network management for Telecommunications（with a view ot setting a specific time limit for exemption ）,and
——light bulbs
欧盟委员会应根据第7（2）条中提及的程序，评价以下方面的应用
——十溴二苯醚，
——特殊用途的直管日光灯中的汞，
——以下用途中所使用的焊料中的铅服务器、存储器、用于交换和传输的网络基础设施、电信网络管理设备（旨在设定本指令豁免部分的特定截止时间），
——灯泡。

2002/95/EC
2003.01.27/
2003.02.13

11. Lead used in compliant pin connector systems.
自适应插脚连接器系统中的铅

2005/747/EC
2005.10.21/
2005.10.25

12.Lead as a coating material for the thermal conduction module c-ring.
热导模组C环镀层中所用的铅。

13a. Lead in optical and filter glass.
光学滤光玻璃中的铅。

13b. Cadmium in optical and filter glass.
光学滤光玻璃中的镉。

14.Lead in solders consisting of more than two elements for the connection between the pins and the package of microprocessors with a lead content of more than 80% and less than 85% by weight.
微处理器针脚及封装连接所使用的含两种以上组分且铅含量在80%和85%之间的焊料中的铅。

15. Lead in solders to complete a viable electrical connection between semiconductor die and carrier within integrated circuit Flip Chip packages.
集成电路倒装晶片封装的半导体连接片和托架之间实施电气连接所用焊料中的铅。

16.Lead in linear incandescent lamps with silicate coated tubes.
管状白炽灯硅酸盐涂层灯管中的铅。

2006/310/EC
2006.04.21/
2006.04.28

17.Lead halide as radiant agent in High Intensity Discharge(HID) lamps used for professional reprography applications.
专业复印设备用的高强度放电灯(HID)中作为发光剂的卤化铅。

18.Lead as activator in the fluorescent powder (1% lead by weight or less) of discharge amps when used as sun tanning lamps containing phosphors such as BSP(BaSi2O5:Pb) as well as when used as speciality lamps for diazo-printing reprography, lithography, insect traps,photochemical and curing processes containing phosphors such as SMS((Sr,Ba)2MgSi2O7:Pb)(2006/310/EC)
当放电灯被用作含磷的仿日晒灯(sun tanning lamps)，比如含有BSP(BaSi2O5:Pb)， 以及用于重氮复印、平版印刷、捕虫器、含磷光化学和含磷食物加工过程的专业灯时，比如SMS((Sr,Ba)2MgSi2O7:Pb)，放电灯中的荧光粉触媒剂的铅含量在其重量的1％或以下。

19. Lead with PbBiSn-Hg and PbInSn-Hg in specific compositions as main amalgam and with PbSn-Hg as auxiliary amalgam in very compact Energy Saving Lamps (ESL).
紧凑型节能灯(ESL)中作为主要汞齐合金的特定成分(PbBiSn-Hg和PbinSg-Hg)中的铅以及作为辅助汞合金PbSn-Hg中的铅。

20. Lead oxide in glass used for bonding front and rear substrates of flat fluorescent lamps used for Liquid Crystal Displays (LCD).
液晶显示器(LCD)用于连接平面荧光灯前后基片用的玻璃中的氧化铅。

21.Lead and cadmium in printing inks for the application of enamels on borosilicate glass.
用于硼硅酸盐玻璃瓷漆的印墨所含的铅及镉。

2006/691/EC
2006.04.21/
2006.04.14

22.Lead as impurity in RIG (rare earth iron garnet) Faraday rotators used for fibre optic communications systems.
在光纤通讯系统稀土铁石榴石法拉第旋转器中作为杂质的铅。
这项豁免有效期至2011年1月1日

23.Lead in finishes of fine pitch components other than connectors with a pitch of 0.65mm or less with NiFe lead frames and lead in finishes of fine pitch components other than connectors with a pitch of 0.65 mm or less with copper lead frames.
使用铁镍合金或者铜引线框架的细间距元器件（即不大于0.65mm的引脚间距）的表面处理中的铅，不包括连接器类。

24.Lead in solders for the soldering to achined through hole discoidal and planar array ceramic multilayer capacitors.
通孔盘状及平面阵列陶瓷多层电容器焊料所含的铅。

25. Lead oxide in plasma display panels (PDP) and surface conduction electron emitter displays (SED) used in structural elements; notably in the front and rear glass dielectric layer, the bus electrode, the black stripe, the address electrode, the barrier ribs, the seal frit and frit ring as well as in print pastes.
等离子显示屏（PDP）及表面传导式电子发射显示器（SED）的部件所用的氧化铅，特别是玻璃前后绝缘层、总线电*、黑条（彩色显像管）、寻址电*、阻挡层肋柱、密封玻璃料以及封装玻璃、环状玻璃、印墨中

26.Lead oxide in the glass envelope of BlackLight Blue (BLB) lamps.
蓝黑灯管（BLB）玻璃外罩所用的氧化铅。

27.Lead alloys as solder for transducers used in high-powered (designated to operate for everal hours at acoustic power levels of 125 dB SPL and above) loudspeakers.
在大功率扬声器中作为转换器焊料的铅合金。

28. Hexavalent chromium in corrosion preventive coatings of unpainted metal sheetings and fasteners used for corrosion protection and Electromagnetic Interference Shielding inequipment falling under category three of Directive 2002/96/EC (IT and telecommunications equipment).Exemption granted until 1 July 2007.
金属板防腐蚀涂层、防腐蚀牢固剂及第2002/96/EC指令（IT及电信设备）涉及的第三类设备的电磁干扰屏障所含的六价铬。
这项豁免有效期至2007年7月1日

2006/692/EC
2006.04.21/
2006.04.14

29.Lead bound in crystal glass as defined in Annex I (Categories 1, 2, 3 and 4) of Council Directive 69/493/EEC.
理事会第69/493/EEC指令附件I（第1、2、3和4类）中定义的水晶玻璃中的铅。

2006/690/EC
2006.04.21/
2006.04.14

30. Cadmium alloys as electrical/mechanical solder joints to electrical conductors located directly on the voice coil in transducers used in high-powered loudspeakers with sound pressure levels of 100 dB (A) and more.
用于音压级大于或等于100分贝高功率音响中音圈转换器上的电导体的电气或机械焊点中的镉合金。

2008/385/EC
2008.01.24/
2008.05.24

31.Lead in soldering materials in mercury free flat fluorescent lamps (which e.g. are used for liquid crystal displays, design or industrial lighting).
无汞平面荧光灯内焊接材料中所含的铅（例如用于液晶显示器、设计或工业用明）。

32. Lead oxide in seal frit used for making window assemblies for Argon and Krypton laser tubes. (2008/385/EC)
封装氩和氪激光管防护窗组件封装玻壳所含的的铅氧化合物.

33. Lead in solders for the soldering of thin copper wires of 100μm diameter and less in power transformers.                                                                 

电力变压器中直径100微米及以下的细铜线所用焊料中的铅。

2009/443/EC
2009.06.10/
2009.06.11

34. Lead in cermet-based trimmer potentiometer elements.                               

金属陶瓷质的微调电位器中的铅。

35. Cadmium in photoresistors for optocouplers applied in professional audio equipment until 31 December 2009.                                                              

专业音频设备中的光耦合器中使用的光敏电阻的镉.这项豁免有效期至2009年12月31日

36. Mercury used as a cathode sputtering inhibitor in DC plasma displays with a content up to 30 mg per display until 1 July 2010.                                                 

直流等离子显示器中，作为阴*溅射抑制剂中的汞，其含量不得超过30毫克/显示器。这项豁免有效期至2010年7月1日

37. Lead in the plating layer of high voltage diodes on the basis of a zinc borate glass body.                                                         

以硼酸锌玻璃体为基础的高压二*管的电镀层的铅

38. Cadmium and cadmium oxide in thick film pastes used on aluminium bonded beryllium oxide.                                                          

用氧化铍连接铝制成的厚膜浆料中镉和氧化镉

39. Cadmium in colour converting II-VI LEDs (< 10 μg Cd per mm2 of light-emitting area) for use in solid state illumination or display systems until 1 July 2014 .                                                                

用于固态照明或显示系统中的彩色转换II - VI族发光二*管(小于10微克每平方毫米的发光区域)内所含的镉。这项豁免有效期至2014年7月1日

2010/122/EU