BS EN 60749-22-2003 半导体器件.机械和气候试验方法.粘接强度

标准号：BS EN 60749-22-2003
中文标准名称：半导体器件.机械和气候试验方法.粘接强度
英文标准名称：Semiconductor devices - Mechanical and climatic test methods - Bond strength
标准类型：L40
发布日期：2003/7/4 12:00:00
实施日期：2003/7/4 12:00:00
中国标准分类号：L40
国际标准分类号：31.080.01
适用范围：This part of IEC 60749 is applicable to semiconductor devices (discrete devices and integrated circuits). The object of this part is to measure bond strength or determine compliance with specified bond strength requirements. NOTE This test is identical to the test method contained in clause 6 of chapter 2 of IEC 60749 (1996), amendment 1, apart from changes to this clause and renumbering. 1 General description of the test Seven test methods are described, each having its own purpose, that is: - methods A and B are intended for testing internal bonds of a device by a direct pulling of the connecting wire; - method C is intended for bonds external to the device and consists of a peeling stress exerted between the lead or terminal and the board or substrate; - method D is intended for internal bonds and consists of a shear stress applied between a die and a substrate or similar face-bonded configurations; - methods E and F are intended for external bonds and consist of a push-off or a pull-off stress exerted between a die and the substrate; - method G is intended to test the mechanical resistance of wire bonds to a shear force. 2 Description of the test apparatus (for all methods) The apparatus for this test should consist of suitable equipment for applying the specified stress on the bond, lead wire or terminals as required in the specified test method. A calibrated measurement and indication of the applied stress in newtons (N) at the point of failure should be provided by equipment capable of measuring stresses up to and including 100 mN with an accuracy of ±2,5 mN, stresses between 100 mN and 500 mN with an accuracy of ±5 mN, and stresses exceeding 500 mN with an accuracy of ±2,5 % of the indicated value. This test is intended to be applied to the wire-to-die bond, wire-to-substrate bond, or the wire-to-terminal bond inside the package of wire-connected semiconductor devices bonded by soldering, thermocompression, ultrasonic and other related techniques.